The mass production of Samsung's latest 16 Gb DDR5 DRAM using a 12nm process node has begun.
Due to its 12nm process node, Samsung's upcoming DDR5 DRAM will provide higher transfer rates and greater efficiency
Samsung's new 12nm-class DDR5 DRAM improves wafer productivity by up to 20% while consuming up to 23% less power than the previous generation. Because of its exceptional power efficiency, it is the perfect choice for multinational IT firms that want to lower the energy use and carbon impact of their servers and data centers.
Samsung was able to develop its 12nm-class process technology by incorporating a new high-κ material that increases cell capacitance. This high capacitance leads to a greater electric potential difference in the data signals, making them easier to distinguish accurately. Additionally, Samsung's work to lower operating voltage and minimize noise has contributed to delivering an optimal solution for customers.
With a maximum speed of 7.2 gigabits per second (Gbps), or the equivalent of processing two 30GB UHD movies in about a second, Samsung's 12nm-class DDR5 DRAM lineup will support a growing list of applications such as data centers, artificial intelligence, and next-generation computing.
Samsung has completed the evaluation of its 16-gigabit DDR5 DRAM for compatibility with AMD as of last December, and is currently working with other global IT companies to drive innovation in the next-generation DRAM market.
The mass production of Samsung's 16-Gigabit DDR5 DRAM is scheduled to begin in the second half of 2023 after it completed an evaluation for compatibility with AMD in December. Samsung is also collaborating with various global IT companies to advance innovation in the next-generation DRAM market.